OREANDA-NEWS. November 08, 2011. Mitsubishi Electric Corporation (TOKYO: 6503) announced today the coming launch of a 7.2V high-efficiency, low-power consumption metal oxide semiconductor field effect transistor (MOSFET) on December 1. The RD01MUS2B is designed for use in high-frequency power amplifier devices for advanced walkie-talkie-type commercial, family radio service (FRS) or general mobile radio service (GMRS) systems, which are drawing attention for their practicality
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RD01MUS2B
during emergencies. Initial production has been set at 200,000 units per month.
High efficiency and low-power consumption for extended performance in field - Highly efficient operation, including a drain efficiency of 70% at 527MHz, enables amplifiers to convert electricity into high-frequency waves at a high rate.
- Standby consumption current of 40mA represents a 60% reduction compared to predecessor RD01MUS2.


Wide margin of transmission power output for more flexible radio designs- 1.6W power output at 527MHz is a 14% improvement over predecessor RD01MUS2.
- Improved transmission power output allows greater flexibility in radio designs.

High tolerance to current surges enables simplified surge protection in radios- Diode embedded between MOSFET gate and source protects devices against current surges.
- Optimized internal structure provides double tolerance to current surges between drain and source compared to predecessor RD01MUS2.

Electrical Characteristics
Conditions: Vds=7.2V, Drain quiescent current=40mA, Frequency=527MHz and Power input=30mW
Power output: 1.6 W (typ)
Drain efficiency: 70 % (typ).