OREANDA-NEWS. November 29, 2011. Mitsubishi Electric Corporation (TOKYO: 6503) announced today it has developed two Gallium Nitride (GaN) High-Electron Mobility Transistor (HEMT) C-band (4-8GHz) amplifiers for satellite earth stations. The MGFC50G5867 and MGFC47G5867, featuring power outputs of an industry-leading
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Left: MGFC50G5867
Right: MGFC47G5867
100W and 50W, respectively, will ship on a sample basis beginning January 10, 2012.
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Left: MGFC50G5867
Right: MGFC47G5867

Gallium Arsenide (GaAs) amplifiers have been commonly employed in microwave power transmitters. In recent years, however, Gallium Nitride (GaN) amplifiers have become increasingly popular due to their high breakdown-voltage and power density, high saturated electron speed and ability to contribute to power saving and the downsizing of power transmitter equipment. Mitsubishi Electric first began sample shipments of high-output GaN HEMT amplifiers for C-band space application in March 2010.High output power, efficiency and high-voltage operation - 100 W or 50 W output power
- More than 43% of power added efficiency
- 40 V high-voltage operation


Low Distortion- Output power meeting 3rd-order Inter Modulation (IM3) = -25dBc of 46dBm
- Internally impedance- matched