OREANDA-NEWS. A TSV-applied product based on 20 nano 8GB, which will lead the next generation server market

SK hynix announced that the company developed world's first 8GB DDR4 based maximum capacity of 128GB module.

Using TSV technology, this product realized maximum capacity of 128GB, which is double the existing maximum capacity of 64GB. It also realized 2,133Mbps, faster than DDR3's 1,333Mbps and through the module with 64 I/Os, it can process 17GB of data per second. The operating voltage has been lowered to 1.2V from the existing DDR3's 1.35V.

SK hynix recently succeeded in consecutive world's first developments such as 64GB module and 128 GB module based on 8GB DDR4, and provided sample products to its major customers. Through these developments, the company was able to keep on leading technical leadership in the server DRAM market. The company is planning to commercialize this product starting the first half of 2015.

Hong Sung Joo, President of SK hynix DRAM Development Division, said, “By developing world's first 128GB DDR4 module, we were able to open a high capacity server market. In the future, we will lead the premium DRAM market by developing high capacity, high speed, and low voltage products.”

Meanwhile, according to an information technology market research institution Gartner, the server DRAM market is expected to maintain its average 37% annual growth rate by 2018, due to the circumstance in expansion of mobile market. At the same time, it is expected that, starting from customers' authorization in 2014, DDR4 DRAM will be used actively in the market in 2015 and it will become major product of the DRAM market starting 2016.